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BFG403W,115

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BFG403W,115

RF TRANS NPN 4.5V 17GHZ CMPAK-4

Manufacturer: NXP USA Inc.

Categories: Bipolar RF Transistors

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NXP USA Inc. BFG403W-115 is an NPN bipolar RF transistor designed for high-frequency applications. This component operates with a collector-emitter breakdown voltage of 4.5V and a maximum collector current of 3.6mA. It features a transition frequency of 17GHz, enabling efficient amplification in the microwave spectrum. The BFG403W-115 offers a typical gain range of 20dB to 22dB and a noise figure as low as 1dB at 900MHz, improving signal integrity in sensitive receiver designs. With a maximum power dissipation of 16mW, it is suitable for low-power RF circuits. The device is supplied in a CMPAK-4 (SC-82A, SOT-343) surface mount package, delivered on tape and reel. This transistor is commonly utilized in wireless communication systems and other demanding RF front-end applications.

Additional Information

Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)
Technical Details:
PackagingTape & Reel (TR)
Package / CaseSC-82A, SOT-343
Mounting TypeSurface Mount
Transistor TypeNPN
Operating Temperature150°C (TJ)
Gain20dB ~ 22dB
Power - Max16mW
Current - Collector (Ic) (Max)3.6mA
Voltage - Collector Emitter Breakdown (Max)4.5V
DC Current Gain (hFE) (Min) @ Ic, Vce50 @ 3mA, 2V
Frequency - Transition17GHz
Noise Figure (dB Typ @ f)1dB ~ 1.6dB @ 900MHz ~ 2GHz
Supplier Device PackageCMPAK-4

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