BFG35,115
RF TRANS NPN 18V 4GHZ SOT223Manufacturer: NXP USA Inc.
Categories: Bipolar RF Transistors
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NXP USA Inc. BFG35-115 is an NPN bipolar RF transistor designed for high-frequency applications up to 4GHz. This surface-mount component, housed in an SC-73 (TO-261-4) package, features a collector-emitter breakdown voltage of 18V and a maximum collector current of 150mA. It offers a minimum DC current gain (hFE) of 25 at 100mA and 10V, with a maximum power dissipation of 1W. The device is rated for operation at an elevated junction temperature of 175°C. This component is commonly utilized in wireless communication systems and other demanding RF circuitry. It is supplied in tape and reel packaging.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-261-4, TO-261AA |
| Mounting Type | Surface Mount |
| Transistor Type | NPN |
| Operating Temperature | 175°C (TJ) |
| Gain | - |
| Power - Max | 1W |
| Current - Collector (Ic) (Max) | 150mA |
| Voltage - Collector Emitter Breakdown (Max) | 18V |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 25 @ 100mA, 10V |
| Frequency - Transition | 4GHz |
| Noise Figure (dB Typ @ f) | - |
| Supplier Device Package | SC-73 |
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