BFG325W/XR,115
RF TRANS NPN 6V 14GHZ CMPAK-4Manufacturer: NXP USA Inc.
Categories: Bipolar RF Transistors
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NXP USA Inc. BFG325W-XR-115 is an NPN bipolar RF transistor designed for high-frequency applications. This component operates with a collector-emitter breakdown voltage of 6V and a maximum collector current of 35mA. Featuring a transition frequency of 14GHz, it delivers a typical gain of 18.3dB. The noise figure is rated at 1.1dB at 2GHz. With a maximum power dissipation of 210mW, this transistor is suitable for operation up to 175°C junction temperature. It is provided in a CMPAK-4 surface mount package, specifically the SC-82A, SOT-343 footprint, supplied on tape and reel. The BFG325W-XR-115 finds application in wireless communications infrastructure and other high-frequency signal amplification circuits.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | SC-82A, SOT-343 |
| Mounting Type | Surface Mount |
| Transistor Type | NPN |
| Operating Temperature | 175°C (TJ) |
| Gain | 18.3dB |
| Power - Max | 210mW |
| Current - Collector (Ic) (Max) | 35mA |
| Voltage - Collector Emitter Breakdown (Max) | 6V |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 60 @ 15mA, 3V |
| Frequency - Transition | 14GHz |
| Noise Figure (dB Typ @ f) | 1.1dB @ 2GHz |
| Supplier Device Package | CMPAK-4 |
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