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BFG310W/XR,115

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BFG310W/XR,115

RF TRANS NPN 6V 14GHZ CMPAK-4

Manufacturer: NXP USA Inc.

Categories: Bipolar RF Transistors

Quality Control: Learn More

NXP USA Inc. BFG310W-XR-115 is an NPN RF bipolar transistor designed for high-frequency applications. This surface mount component, packaged in a CMPAK-4 (SC-82A, SOT-343), offers a 6V collector-emitter breakdown voltage and a maximum collector current of 10mA. It features a transition frequency of 14GHz and provides a typical gain of 18dB, with a minimum DC current gain of 60 at 5mA and 3V. The transistor exhibits a low noise figure of 1dB at 2GHz and can dissipate up to 60mW of power. Operating at an elevated junction temperature of 175°C, the BFG310W-XR-115 is suitable for use in wireless communication systems and other demanding RF circuitry. It is supplied in Tape & Reel packaging.

Additional Information

Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)
Technical Details:
PackagingTape & Reel (TR)
Package / CaseSC-82A, SOT-343
Mounting TypeSurface Mount
Transistor TypeNPN
Operating Temperature175°C (TJ)
Gain18dB
Power - Max60mW
Current - Collector (Ic) (Max)10mA
Voltage - Collector Emitter Breakdown (Max)6V
DC Current Gain (hFE) (Min) @ Ic, Vce60 @ 5mA, 3V
Frequency - Transition14GHz
Noise Figure (dB Typ @ f)1dB @ 2GHz
Supplier Device PackageCMPAK-4

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