Home

Products

Discrete Semiconductor Products

Transistors

Bipolar (BJT)

Bipolar RF Transistors

BFG310/XR,215

Banner
productimage

BFG310/XR,215

RF TRANS NPN 6V 14GHZ SOT143R

Manufacturer: NXP USA Inc.

Categories: Bipolar RF Transistors

Quality Control: Learn More

NXP USA Inc. BFG310-XR-215 is an NPN bipolar RF transistor designed for high-frequency applications. This device operates with a collector-emitter breakdown voltage of 6V and a maximum collector current of 10mA. It features a transition frequency (fT) of 14GHz and provides a typical gain of 18dB. The noise figure is rated at 1dB at 2GHz, making it suitable for sensitive receiver front-ends. With a maximum power dissipation of 60mW, this transistor is specified for operation up to an extended junction temperature of 175°C. The BFG310-XR-215 is supplied in a SOT-143R surface-mount package, delivered on tape and reel. Its performance characteristics are beneficial in telecommunications infrastructure and high-frequency test and measurement equipment.

Additional Information

Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)
Technical Details:
PackagingTape & Reel (TR)
Package / CaseSOT-143R
Mounting TypeSurface Mount
Transistor TypeNPN
Operating Temperature175°C (TJ)
Gain18dB
Power - Max60mW
Current - Collector (Ic) (Max)10mA
Voltage - Collector Emitter Breakdown (Max)6V
DC Current Gain (hFE) (Min) @ Ic, Vce60 @ 5mA, 3V
Frequency - Transition14GHz
Noise Figure (dB Typ @ f)1dB @ 2GHz
Supplier Device PackageSOT-143R

Request a Quote

Name (required)

Phone (required)

Work Email (required)

Country (required)

Company Name (required)

CAPTCHA

Clients Also Buy
product image
BLT70,115

RF TRANS NPN 8V 900MHZ SOT223

product image
BFG505/X,215

RF TRANS NPN 15V 9GHZ SOT143B

product image
BFG520,215

RF TRANS NPN 15V 9GHZ SOT143B