BFG31,115
RF TRANS PNP 15V 5GHZ SOT223Manufacturer: NXP USA Inc.
Categories: Bipolar RF Transistors
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NXP USA Inc. BFG31-115 is a PNP RF bipolar transistor designed for high-frequency applications. This component operates with a collector-emitter breakdown voltage of 15V and can handle a maximum collector current of 100mA. Featuring a transition frequency of 5GHz and a maximum power dissipation of 1W, the BFG31-115 is suitable for demanding RF designs. It exhibits a minimum DC current gain (hFE) of 25 at 70mA and 10V. The transistor is housed in a surface-mount SC-73 package, specifically TO-261-4, TO-261AA, and is supplied on tape and reel. This device finds utility in telecommunications and other high-frequency signal amplification circuits. The operating junction temperature range extends up to 175°C.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-261-4, TO-261AA |
| Mounting Type | Surface Mount |
| Transistor Type | PNP |
| Operating Temperature | 175°C (TJ) |
| Gain | - |
| Power - Max | 1W |
| Current - Collector (Ic) (Max) | 100mA |
| Voltage - Collector Emitter Breakdown (Max) | 15V |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 25 @ 70mA, 10V |
| Frequency - Transition | 5GHz |
| Noise Figure (dB Typ @ f) | - |
| Supplier Device Package | SC-73 |
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