BFG25AW/X,115
RF TRANS NPN 5V 5GHZ 4SOManufacturer: NXP USA Inc.
Categories: Bipolar RF Transistors
Quality Control: Learn More
NXP USA Inc. BFG25AW-X-115 is an NPN bipolar RF transistor designed for high-frequency applications. This component operates at a collector-emitter breakdown voltage of 5V and a maximum collector current of 6.5mA. It features a transition frequency of 5GHz and a maximum power dissipation of 500mW. The DC current gain (hFE) is a minimum of 50 at 500µA and 1V. The noise figure is typically 1.9dB to 2dB at 1GHz. The operating junction temperature range extends to 175°C. Packaged in a 4-SO (SOT-343 Reverse Pinning) format, this device is supplied on tape and reel. Its performance characteristics make it suitable for use in wireless infrastructure and general-purpose RF circuits.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | SOT-343 Reverse Pinning |
| Mounting Type | Surface Mount |
| Transistor Type | NPN |
| Operating Temperature | 175°C (TJ) |
| Gain | - |
| Power - Max | 500mW |
| Current - Collector (Ic) (Max) | 6.5mA |
| Voltage - Collector Emitter Breakdown (Max) | 5V |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 50 @ 500µA, 1V |
| Frequency - Transition | 5GHz |
| Noise Figure (dB Typ @ f) | 1.9dB ~ 2dB @ 1GHz |
| Supplier Device Package | 4-SO |
Request a Quote
Clients Also Buy
BLT70,115
RF TRANS NPN 8V 900MHZ SOT223
BFU550AR
RF TRANS NPN 12V 11GHZ TO236AB
BFG505/X,215
RF TRANS NPN 15V 9GHZ SOT143B
