BFG198,115
RF TRANS NPN 10V 8GHZ SOT223Manufacturer: NXP USA Inc.
Categories: Bipolar RF Transistors
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NXP USA Inc. BFG198-115 is an NPN bipolar RF transistor designed for high-frequency applications. This surface mount component, packaged in a TO-261-4 (SC-73), offers a collector-emitter breakdown voltage of 10V and a maximum collector current of 100mA. With a transition frequency of 8GHz and a power dissipation of 1W, it is suitable for demanding RF circuitry. The device features a typical DC current gain (hFE) of 40 at 50mA and 5V, and operates at an elevated junction temperature of up to 175°C. This component finds utility in wireless communication systems and broadband amplification stages. It is supplied in Tape & Reel (TR) packaging.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-261-4, TO-261AA |
| Mounting Type | Surface Mount |
| Transistor Type | NPN |
| Operating Temperature | 175°C (TJ) |
| Gain | - |
| Power - Max | 1W |
| Current - Collector (Ic) (Max) | 100mA |
| Voltage - Collector Emitter Breakdown (Max) | 10V |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 40 @ 50mA, 5V |
| Frequency - Transition | 8GHz |
| Noise Figure (dB Typ @ f) | - |
| Supplier Device Package | SC-73 |
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