BFG135,115
RF TRANS NPN 15V 7GHZ SOT223Manufacturer: NXP USA Inc.
Categories: Bipolar RF Transistors
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NXP USA Inc. BFG135-115 is an NPN bipolar RF transistor featuring a 15V collector-emitter breakdown voltage and a maximum collector current of 150mA. This device offers a transition frequency of 7GHz and a power dissipation of 1W. Designed for surface mount applications, it is supplied in a SC-73 package, also known as TO-261-4 or TO-261AA. The BFG135-115 exhibits a minimum DC current gain (hFE) of 80 at 100mA and 10V. Its high operating temperature capability of 175°C (TJ) makes it suitable for demanding applications in wireless infrastructure, satellite communications, and radar systems. The component is provided in tape and reel packaging.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-261-4, TO-261AA |
| Mounting Type | Surface Mount |
| Transistor Type | NPN |
| Operating Temperature | 175°C (TJ) |
| Gain | - |
| Power - Max | 1W |
| Current - Collector (Ic) (Max) | 150mA |
| Voltage - Collector Emitter Breakdown (Max) | 15V |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 80 @ 100mA, 10V |
| Frequency - Transition | 7GHz |
| Noise Figure (dB Typ @ f) | - |
| Supplier Device Package | SC-73 |
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