BFG10/X,215
RF TRANS NPN 8V 1.9GHZ SOT143BManufacturer: NXP USA Inc.
Categories: Bipolar RF Transistors
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NXP USA Inc. RF Transistor, BFG10-X-215, is an NPN bipolar RF transistor designed for high-frequency applications. This surface mount component, housed in a SOT-143B package (TO-253-4, TO-253AA), supports a collector current of up to 250mA and a collector-emitter breakdown voltage of 8V. It features a transition frequency of 1.9GHz and a typical gain of 7dB at 1.9GHz. The device offers a minimum DC current gain (hFE) of 25 at 50mA and 5V, and a maximum power dissipation of 400mW. Operating at junction temperatures up to 175°C, the BFG10-X-215 is suitable for use in telecommunications and industrial RF systems. The component is supplied in Tape & Reel (TR) packaging.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-253-4, TO-253AA |
| Mounting Type | Surface Mount |
| Transistor Type | NPN |
| Operating Temperature | 175°C (TJ) |
| Gain | 7dB |
| Power - Max | 400mW |
| Current - Collector (Ic) (Max) | 250mA |
| Voltage - Collector Emitter Breakdown (Max) | 8V |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 25 @ 50mA, 5V |
| Frequency - Transition | 1.9GHz |
| Noise Figure (dB Typ @ f) | - |
| Supplier Device Package | SOT-143B |
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