BFG10,215
RF TRANS NPN 8V 1.9GHZ SOT143BManufacturer: NXP USA Inc.
Categories: Bipolar RF Transistors
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NXP USA Inc. BFG10-215 is an NPN bipolar RF transistor designed for high-frequency applications. This surface mount component, packaged in a SOT-143B (TO-253-4, TO-253AA), operates up to 1.9GHz with a transition frequency of 1.9GHz and offers a typical gain of 7dB. It supports a maximum collector current (Ic) of 250mA and a collector-emitter breakdown voltage (Vce) of 8V. The device exhibits a minimum DC current gain (hFE) of 25 at 50mA and 5V, with a maximum power dissipation of 400mW. Operating temperature range extends to 175°C (TJ). The BFG10-215 is commonly utilized in wireless infrastructure, satellite communications, and broadband applications, supplied in Tape & Reel (TR) packaging.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-253-4, TO-253AA |
| Mounting Type | Surface Mount |
| Transistor Type | NPN |
| Operating Temperature | 175°C (TJ) |
| Gain | 7dB |
| Power - Max | 400mW |
| Current - Collector (Ic) (Max) | 250mA |
| Voltage - Collector Emitter Breakdown (Max) | 8V |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 25 @ 50mA, 5V |
| Frequency - Transition | 1.9GHz |
| Noise Figure (dB Typ @ f) | - |
| Supplier Device Package | SOT-143B |
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