MCM69R820CZP6R
Late-Write SRAM, 256KX18, 3ns, BICMOS, PBGA119Manufacturer: NXP Semiconductors
Categories: SRAMs
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NXP Semiconductors MCM69R820CZP6R is a 256K x 18 Late-Write SRAM operating at 3ns access time. This BICMOS technology component features a 119-ball PBGA package with a 1.27mm terminal pitch and a rectangular grid array footprint. Designed for high-speed data applications, it supports synchronous operation within a commercial temperature range of 0°C to 70°C. The memory density is approximately 4.5 Megabits, with a supply voltage range of 3.135V to 3.465V. This device is suitable for applications in networking, telecommunications, and high-performance computing.
Additional Information
Series: MCM69R820RoHS Status: Manufacturer Lead Time: Product Status: DiscontinuedPackaging: Datasheet:Download Free CAD Model:
Technical Details:
| Width | 14.0000 |
| Technology | BICMOS |
| Length | 22.0000 |
| Access_Time_Max | 3.0000000000000000 |
| JESD_30_Code | R-PBGA-B119 |
| Memory_Density | 4718592.0000000000000000 |
| Memory_IC_Type | LATE-WRITE SRAM |
| Memory_Organization | 256KX18 |
| Memory_Width | 18 |
| Number_of_Functions | 1 |
| Number_of_Terminals | 119 |
| Number_of_Words | 262144.0000000000000000 |
| Number_of_Words_Code | 256k |
| Operating_Mode | Synchronous |
| Operating_Temperature_Max | 70.0 |
| Operating_Temperature_Min | 0.0 |
| Package_Body_Material | PLASTIC/EPOXY |
| Package_Code | BGA |
| Package_Shape | Rectangular |
| Package_Style | GRID ARRAY |
| Parallel_Serial | Parallel |
| Seated_Height_Max | 2.4000 |
| Supply_Voltage_Max | 3.46500 |
| Supply_Voltage_Min | 3.13500 |
| Supply_Voltage_Nom | 3.3 |
| Surface_Mount | Yes |
| Terminal_Form | Ball |
| Terminal_Pitch | 1.270 |
| Terminal_Position | Bottom |
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