MCM69R820CZP4.4R
Late-Write SRAM, 256KX18, 2.2ns, BICMOS, PBGA119Manufacturer: NXP Semiconductors
Categories: SRAMs
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NXP Semiconductors MCM69R820CZP4-4R is a 256K x 18 Late-Write SRAM featuring BICMOS technology. This synchronous memory component offers a maximum access time of 2.2 nanoseconds and operates within a 3.135V to 3.465V supply voltage range. Packaged in a PBGA119 (R-PBGA-B119) with a 1.27mm terminal pitch, it is suited for applications requiring high-speed data buffering and processing. The MCM69R820 series is utilized in demanding sectors such as computing, telecommunications, and industrial automation where rapid memory access and reliable performance are critical. Its robust design and specifications make it a suitable choice for complex system architectures.
Additional Information
Series: MCM69R820RoHS Status: Manufacturer Lead Time: Product Status: DiscontinuedPackaging: Datasheet:Download Free CAD Model:
Technical Details:
| Length | 22.0000 |
| Width | 14.0000 |
| Technology | BICMOS |
| Access_Time_Max | 2.2000000000000000 |
| JESD_30_Code | R-PBGA-B119 |
| Memory_Density | 4718592.0000000000000000 |
| Memory_IC_Type | LATE-WRITE SRAM |
| Memory_Organization | 256KX18 |
| Memory_Width | 18 |
| Number_of_Functions | 1 |
| Number_of_Terminals | 119 |
| Number_of_Words | 262144.0000000000000000 |
| Number_of_Words_Code | 256k |
| Operating_Mode | Synchronous |
| Operating_Temperature_Max | 70.0 |
| Operating_Temperature_Min | 0.0 |
| Package_Body_Material | PLASTIC/EPOXY |
| Package_Code | BGA |
| Package_Shape | Rectangular |
| Package_Style | GRID ARRAY |
| Parallel_Serial | Parallel |
| Seated_Height_Max | 2.4000 |
| Supply_Voltage_Max | 3.46500 |
| Supply_Voltage_Min | 3.13500 |
| Supply_Voltage_Nom | 3.3 |
| Surface_Mount | Yes |
| Terminal_Form | Ball |
| Terminal_Pitch | 1.270 |
| Terminal_Position | Bottom |
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