MCM69R819AZP6R
Late-Write SRAM, 256KX18, 3ns, BICMOS, PBGA119Manufacturer: NXP Semiconductors
Categories: SRAMs
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NXP Semiconductors MCM69R819AZP6R is a 256K x 18 Late-Write SRAM featuring BICMOS technology for high-speed operation. This synchronous memory component offers a maximum access time of 3ns and operates with a nominal supply voltage of 3.3V, within the range of 3.15V to 3.6V. The MCM69R819 series device is housed in a 119-ball PBGA (R-PBGA-B119) package with a 1.27mm terminal pitch. Its rectangular package dimensions are 22.00mm in length and 14.00mm in width, with a maximum seated height of 2.40mm. This component is suitable for applications requiring rapid data access and buffering in demanding environments, including telecommunications, networking, and high-performance computing. The operating temperature range is 0°C to 70°C.
Additional Information
Series: MCM69R819RoHS Status: Manufacturer Lead Time: Product Status: DiscontinuedPackaging: Datasheet:Download Free CAD Model:
Technical Details:
| Length | 22.0000 |
| Width | 14.0000 |
| Technology | BICMOS |
| Access_Time_Max | 3.0000000000000000 |
| JESD_30_Code | R-PBGA-B119 |
| Memory_Density | 4718592.0000000000000000 |
| Memory_IC_Type | LATE-WRITE SRAM |
| Memory_Organization | 256KX18 |
| Memory_Width | 18 |
| Number_of_Functions | 1 |
| Number_of_Terminals | 119 |
| Number_of_Words | 262144.0000000000000000 |
| Number_of_Words_Code | 256k |
| Operating_Mode | Synchronous |
| Operating_Temperature_Max | 70.0 |
| Operating_Temperature_Min | 0.0 |
| Package_Body_Material | PLASTIC/EPOXY |
| Package_Code | BGA |
| Package_Shape | Rectangular |
| Package_Style | GRID ARRAY |
| Parallel_Serial | Parallel |
| Seated_Height_Max | 2.4000 |
| Supply_Voltage_Max | 3.60000 |
| Supply_Voltage_Min | 3.15000 |
| Supply_Voltage_Nom | 3.3 |
| Surface_Mount | Yes |
| Terminal_Form | Ball |
| Terminal_Pitch | 1.270 |
| Terminal_Position | Bottom |
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