MCM69R818AZP8R
Late-Write SRAM, 256KX18, 4ns, BICMOS, PBGA119Manufacturer: NXP Semiconductors
Categories: SRAMs
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NXP Semiconductors MCM69R818AZP8R is a 4ns Late-Write SRAM with a BICMOS technology. This component features a memory organization of 256K x 18, providing a total density of 4.7 megabits. Operating synchronously, it offers a Common I/O type and 3-State output characteristics. The MCM69R818AZP8R is housed in a 119-ball Plastic Ball Grid Array (PBGA) package, specifically R-PBGA-B119, with a terminal pitch of 1.270mm. It operates within a temperature range of 0°C to 70°C and requires a minimum standby voltage of 3.15V, with a maximum supply current of 450mA. This SRAM is suitable for applications in networking, telecommunications, and high-performance computing.
Additional Information
Series: MCM69R818RoHS Status: Manufacturer Lead Time: Product Status: Active-UnconfirmedPackaging: Datasheet:Download Free CAD Model:
Technical Details:
| Technology | BICMOS |
| Access_Time_Max | 4.0000000000000000 |
| I_O_Type | COMMON |
| JESD_30_Code | R-PBGA-B119 |
| Memory_Density | 4718592.0000000000000000 |
| Memory_IC_Type | LATE-WRITE SRAM |
| Memory_Organization | 256KX18 |
| Memory_Width | 18 |
| Number_of_Terminals | 119 |
| Number_of_Words | 262144.0000000000000000 |
| Number_of_Words_Code | 256k |
| Operating_Mode | Synchronous |
| Operating_Temperature_Max | 70.0 |
| Operating_Temperature_Min | 0.0 |
| Output_Characteristics | 3-State |
| Package_Body_Material | PLASTIC/EPOXY |
| Package_Code | BGA |
| Package_Equivalence_Code | BGA119,7X17,50 |
| Package_Shape | Rectangular |
| Package_Style | GRID ARRAY |
| Parallel_Serial | Parallel |
| Standby_Voltage_Min | 3.150000 |
| Supply_Current_Max | 450.000000000000000 |
| Surface_Mount | Yes |
| Terminal_Form | Ball |
| Terminal_Pitch | 1.270 |
| Terminal_Position | Bottom |
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