MCM69R738CZP4.4R
Late-Write SRAM, 128KX36, 2.2ns, BICMOS, PBGA119Manufacturer: NXP Semiconductors
Categories: SRAMs
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NXP Semiconductors MCM69R738CZP4-4R is a high-performance, late-write synchronous SRAM. This BICMOS device features a memory organization of 128K x 36 bits, providing a total density of 4.7 Megabits. With an access time of 2.2 nanoseconds, it is suitable for demanding applications requiring rapid data retrieval. The MCM69R738CZP4-4R operates within a supply voltage range of 3.135V to 3.465V and is specified for commercial temperature ranges (0°C to 70°C). Packaged in a 119-ball PBGA (R-PBGA-B119) with a 1.27mm terminal pitch, this surface-mount component is designed for efficient board assembly. Applications for this memory component include high-speed networking, telecommunications infrastructure, and advanced computing systems.
Additional Information
Series: MCM69R738RoHS Status: Manufacturer Lead Time: Product Status: DiscontinuedPackaging: Datasheet:Download Free CAD Model:
Technical Details:
| Width | 14.0000 |
| Technology | BICMOS |
| Length | 22.0000 |
| Access_Time_Max | 2.2000000000000000 |
| JESD_30_Code | R-PBGA-B119 |
| Memory_Density | 4718592.0000000000000000 |
| Memory_IC_Type | LATE-WRITE SRAM |
| Memory_Organization | 128KX36 |
| Memory_Width | 36 |
| Number_of_Functions | 1 |
| Number_of_Terminals | 119 |
| Number_of_Words | 131072.0000000000000000 |
| Number_of_Words_Code | 128K |
| Operating_Mode | Synchronous |
| Operating_Temperature_Max | 70.0 |
| Operating_Temperature_Min | 0.0 |
| Package_Body_Material | PLASTIC/EPOXY |
| Package_Code | BGA |
| Package_Shape | Rectangular |
| Package_Style | GRID ARRAY |
| Parallel_Serial | Parallel |
| Seated_Height_Max | 2.4000 |
| Supply_Voltage_Max | 3.46500 |
| Supply_Voltage_Min | 3.13500 |
| Supply_Voltage_Nom | 3.3 |
| Surface_Mount | Yes |
| Terminal_Form | Ball |
| Terminal_Pitch | 1.270 |
| Terminal_Position | Bottom |
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