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MCM69R738AZP5

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MCM69R738AZP5

Late-Write SRAM, 128KX36, 2.5ns, BICMOS, PBGA119

Manufacturer: NXP Semiconductors

Categories: SRAMs

Quality Control: Learn More

The NXP Semiconductors MCM69R738AZP5 is a Late-Write SRAM with a memory organization of 128K x 36, providing a total density of 4.7 Megabits. This component features a maximum access time of 2.5 ns, leveraging BICMOS technology for high performance. It operates synchronously and offers a common I/O type with 3-state outputs. The MCM69R738AZP5 is housed in a PBGA119 package, a rectangular grid array with 119 terminals on a 1.27mm pitch. This device supports a supply voltage range of 3.15V to 3.60V and operates within an industrial temperature range of 0°C to 70°C. Its capabilities make it suitable for applications in high-speed computing, telecommunications infrastructure, and advanced networking equipment.

Additional Information

Series: MCM69R738RoHS Status: Manufacturer Lead Time: Product Status: Active-UnconfirmedPackaging: TrayDatasheet:
Technical Details:
Length22.0000
Width14.0000
TechnologyBICMOS
Access_Time_Max2.5000000000000000
I_O_TypeCOMMON
JESD_30_CodeR-PBGA-B119
Memory_Density4718592.0000000000000000
Memory_IC_TypeLATE-WRITE SRAM
Memory_Organization128KX36
Memory_Width36
Number_of_Functions1
Number_of_Ports1
Number_of_Terminals119
Number_of_Words131072.0000000000000000
Number_of_Words_Code128K
Operating_ModeSynchronous
Operating_Temperature_Max70.0
Operating_Temperature_Min0.0
Output_Characteristics3-State
Output_EnableYes
Package_Body_MaterialPLASTIC/EPOXY
Package_CodeBGA
Package_Equivalence_CodeBGA119,7X17,50
Package_ShapeRectangular
Package_StyleGRID ARRAY
Parallel_SerialParallel
Seated_Height_Max2.4000
Standby_Current_Max0.050000000000000
Standby_Voltage_Min3.150000
Supply_Current_Max550.000000000000000
Supply_Voltage_Max3.60000
Supply_Voltage_Min3.15000
Supply_Voltage_Nom3.3
Surface_MountYes
Terminal_FormBall
Terminal_Pitch1.270
Terminal_PositionBottom

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