MCM69R736CZP6
Late-Write SRAM, 128KX36, 3ns, BICMOS, PBGA119Manufacturer: NXP Semiconductors
Categories: SRAMs
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NXP Semiconductors MCM69R736CZP6 is a 128K x 36 synchronous Late-Write SRAM. This BICMOS device offers a maximum access time of 3ns, enabling high-speed data handling. The memory organization of 128K words by 36 bits provides ample capacity for demanding applications. It operates within a temperature range of 0°C to 70°C and utilizes a 3.3V nominal supply voltage. The component is housed in a 119-ball PBGA package with a terminal pitch of 1.27mm. This SRAM is suitable for use in networking equipment, high-performance computing, and industrial automation systems.
Additional Information
Series: MCM69R736RoHS Status: Manufacturer Lead Time: Product Status: DiscontinuedPackaging: Datasheet:Download Free CAD Model:
Technical Details:
| Length | 22.0000 |
| Width | 14.0000 |
| Technology | BICMOS |
| Access_Time_Max | 3.0000000000000000 |
| JESD_30_Code | S-PBGA-B119 |
| Memory_Density | 4718592.0000000000000000 |
| Memory_IC_Type | LATE-WRITE SRAM |
| Memory_Organization | 128KX36 |
| Memory_Width | 36 |
| Number_of_Functions | 1 |
| Number_of_Terminals | 119 |
| Number_of_Words | 131072.0000000000000000 |
| Number_of_Words_Code | 128K |
| Operating_Mode | Synchronous |
| Operating_Temperature_Max | 70.0 |
| Operating_Temperature_Min | 0.0 |
| Package_Body_Material | PLASTIC/EPOXY |
| Package_Code | BGA |
| Package_Shape | Square |
| Package_Style | GRID ARRAY |
| Parallel_Serial | Parallel |
| Seated_Height_Max | 2.4000 |
| Supply_Voltage_Max | 3.46500 |
| Supply_Voltage_Min | 3.13500 |
| Supply_Voltage_Nom | 3.3 |
| Surface_Mount | Yes |
| Terminal_Form | Ball |
| Terminal_Pitch | 1.270 |
| Terminal_Position | Bottom |
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