MCM69R736AZP8
Late-Write SRAM, 128KX36, 4ns, BICMOS, PBGA119Manufacturer: NXP Semiconductors
Categories: SRAMs
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NXP Semiconductors MCM69R736AZP8 is a synchronous, late-write SRAM organized as 128K words by 36 bits, offering a total memory density of 4Mb. This BICMOS device features a maximum access time of 4ns and operates with common I/O. The MCM69R736 series component is housed in a 119-ball PBGA package with a 1.27mm pitch. Designed for surface mounting, it operates within a temperature range of 0°C to 70°C. Applications for this component can be found in networking infrastructure, industrial automation, and high-performance computing. The device has a standby voltage minimum of 3.15V and a maximum supply current of 560mA.
Additional Information
Series: MCM69R736RoHS Status: Manufacturer Lead Time: Product Status: Active-UnconfirmedPackaging: Datasheet:Download Free CAD Model:
Technical Details:
| Technology | BICMOS |
| Access_Time_Max | 4.0000000000000000 |
| I_O_Type | COMMON |
| JESD_30_Code | R-PBGA-B119 |
| Memory_Density | 4718592.0000000000000000 |
| Memory_IC_Type | LATE-WRITE SRAM |
| Memory_Organization | 128KX36 |
| Memory_Width | 36 |
| Number_of_Terminals | 119 |
| Number_of_Words | 131072.0000000000000000 |
| Number_of_Words_Code | 128K |
| Operating_Mode | Synchronous |
| Operating_Temperature_Max | 70.0 |
| Operating_Temperature_Min | 0.0 |
| Output_Characteristics | 3-State |
| Package_Body_Material | PLASTIC/EPOXY |
| Package_Code | BGA |
| Package_Equivalence_Code | BGA119,7X17,50 |
| Package_Shape | Rectangular |
| Package_Style | GRID ARRAY |
| Parallel_Serial | Parallel |
| Standby_Voltage_Min | 3.150000 |
| Supply_Current_Max | 560.000000000000000 |
| Surface_Mount | Yes |
| Terminal_Form | Ball |
| Terminal_Pitch | 1.270 |
| Terminal_Position | Bottom |
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