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MCM69R618ZP8R

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MCM69R618ZP8R

Late-Write SRAM, 64KX18, 4ns, BICMOS, PBGA119

Manufacturer: NXP Semiconductors

Categories: SRAMs

Quality Control: Learn More

NXP Semiconductors MCM69R618ZP8R is a BICMOS Late-Write SRAM with a memory organization of 64K x 18 bits. This component offers a maximum access time of 4.0 ns, enabling high-speed data operations. The MCM69R618 series features synchronous operation and is housed in a 119-ball PBGA (Plastic Ball Grid Array) package with a rectangular shape and a terminal pitch of 1.27 mm. The device operates within a supply voltage range of 3.15 V to 3.6 V, with a nominal voltage of 3.3 V. Its standby voltage is a minimum of 3.15 V. The operating temperature range is from 0°C to 70°C. This SRAM is suitable for applications requiring fast data buffering and storage, commonly found in networking equipment, telecommunications infrastructure, and high-performance computing systems. The common I/O type and 3-state output characteristics facilitate integration into complex system designs.

Additional Information

Series: MCM69R618RoHS Status: Manufacturer Lead Time: Product Status: ActivePackaging: Datasheet:
Technical Details:
Length22.0000
Width14.0000
TechnologyBICMOS
Access_Time_Max4.0000000000000000
I_O_TypeCOMMON
JESD_30_CodeR-PBGA-B119
Memory_Density1179648.0000000000000000
Memory_IC_TypeLATE-WRITE SRAM
Memory_Organization64KX18
Memory_Width18
Number_of_Functions1
Number_of_Terminals119
Number_of_Words65536.0000000000000000
Number_of_Words_Code64k
Operating_ModeSynchronous
Operating_Temperature_Max70.0
Operating_Temperature_Min0.0
Output_Characteristics3-State
Package_Body_MaterialPLASTIC/EPOXY
Package_CodeBGA
Package_Equivalence_CodeBGA119,7X17,50
Package_ShapeRectangular
Package_StyleGRID ARRAY
Parallel_SerialParallel
Seated_Height_Max2.4000
Standby_Voltage_Min3.150000
Supply_Voltage_Max3.60000
Supply_Voltage_Min3.15000
Supply_Voltage_Nom3.3
Surface_MountYes
Terminal_FormBall
Terminal_Pitch1.270
Terminal_PositionBottom

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