MCM69R618ZP8
Late-Write SRAM, 64KX18, 4ns, BICMOS, PBGA119Manufacturer: NXP Semiconductors
Categories: SRAMs
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The NXP Semiconductors MCM69R618ZP8 is a 64K x 18 Late-Write SRAM featuring a 4ns access time. This BICMOS technology component operates synchronously with a common I/O type and 3-state output characteristics. It is housed in a 119-ball PBGA package (R-PBGA-B119) with a rectangular shape, 1.27mm terminal pitch, and a maximum seated height of 2.4mm. The device supports a supply voltage range of 3.15V to 3.6V, with a nominal voltage of 3.3V, and a standby voltage minimum of 3.15V. Operating temperature ranges from 0°C to 70°C. This memory IC is suitable for applications in networking, telecommunications, and high-performance computing.
Additional Information
Series: MCM69R618RoHS Status: Manufacturer Lead Time: Product Status: ActivePackaging: Datasheet:Download Free CAD Model:
Technical Details:
| Length | 22.0000 |
| Width | 14.0000 |
| Technology | BICMOS |
| Access_Time_Max | 4.0000000000000000 |
| I_O_Type | COMMON |
| JESD_30_Code | R-PBGA-B119 |
| Memory_Density | 1179648.0000000000000000 |
| Memory_IC_Type | LATE-WRITE SRAM |
| Memory_Organization | 64KX18 |
| Memory_Width | 18 |
| Number_of_Functions | 1 |
| Number_of_Terminals | 119 |
| Number_of_Words | 65536.0000000000000000 |
| Number_of_Words_Code | 64k |
| Operating_Mode | Synchronous |
| Operating_Temperature_Max | 70.0 |
| Operating_Temperature_Min | 0.0 |
| Output_Characteristics | 3-State |
| Package_Body_Material | PLASTIC/EPOXY |
| Package_Code | BGA |
| Package_Equivalence_Code | BGA119,7X17,50 |
| Package_Shape | Rectangular |
| Package_Style | GRID ARRAY |
| Parallel_Serial | Parallel |
| Seated_Height_Max | 2.4000 |
| Standby_Voltage_Min | 3.150000 |
| Supply_Voltage_Max | 3.60000 |
| Supply_Voltage_Min | 3.15000 |
| Supply_Voltage_Nom | 3.3 |
| Surface_Mount | Yes |
| Terminal_Form | Ball |
| Terminal_Pitch | 1.270 |
| Terminal_Position | Bottom |
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