MCM69R536ZP8
Late-Write SRAM, 32KX36, 4ns, BICMOS, PBGA119Manufacturer: NXP Semiconductors
Categories: SRAMs
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NXP Semiconductors MCM69R536ZP8 is a 32K x 36 BICMOS Late-Write SRAM offering a 4ns access time. This component features a synchronous operating mode and a common I/O type. Packaged in a 119-ball PBGA (R-PBGA-B119) with a 1.27mm terminal pitch, it supports a supply voltage range of 3.15V to 3.60V, with a nominal 3.3V. The memory organization is 32K words by 36 bits, providing a total density of 1179648 bits. Designed for surface mounting, it operates within a temperature range of 0°C to 70°C. This SRAM is suitable for applications in networking, telecommunications, and high-performance computing where fast data buffering and low latency are critical.
Additional Information
Series: MCM69R536RoHS Status: Manufacturer Lead Time: Product Status: ActivePackaging: Datasheet:Download Free CAD Model:
Technical Details:
| Length | 22.0000 |
| Width | 14.0000 |
| Technology | BICMOS |
| Access_Time_Max | 4.0000000000000000 |
| I_O_Type | COMMON |
| JESD_30_Code | R-PBGA-B119 |
| Memory_Density | 1179648.0000000000000000 |
| Memory_IC_Type | LATE-WRITE SRAM |
| Memory_Organization | 32KX36 |
| Memory_Width | 36 |
| Number_of_Functions | 1 |
| Number_of_Terminals | 119 |
| Number_of_Words | 32768.0000000000000000 |
| Number_of_Words_Code | 32k |
| Operating_Mode | Synchronous |
| Operating_Temperature_Max | 70.0 |
| Operating_Temperature_Min | 0.0 |
| Output_Characteristics | 3-State |
| Package_Body_Material | PLASTIC/EPOXY |
| Package_Code | BGA |
| Package_Equivalence_Code | BGA119,7X17,50 |
| Package_Shape | Rectangular |
| Package_Style | GRID ARRAY |
| Parallel_Serial | Parallel |
| Seated_Height_Max | 2.4000 |
| Standby_Voltage_Min | 3.150000 |
| Supply_Voltage_Max | 3.60000 |
| Supply_Voltage_Min | 3.15000 |
| Supply_Voltage_Nom | 3.3 |
| Surface_Mount | Yes |
| Terminal_Form | Ball |
| Terminal_Pitch | 1.270 |
| Terminal_Position | Bottom |
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