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MCM69P618CTQ6R

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MCM69P618CTQ6R

Cache SRAM, 64KX18, 6ns, BICMOS, PQFP100

Manufacturer: NXP Semiconductors

Categories: SRAMs

Quality Control: Learn More

NXP Semiconductors MCM69P618CTQ6R is a 64K x 18 Cache SRAM with a maximum access time of 6ns. This BICMOS device operates synchronously with a supply voltage range of 3.135V to 3.6V, typically 3.3V. It features a 100-terminal LQFP package (R-PQFP-G100) with a 0.65mm terminal pitch. The memory density is 1.179Mbits. This component is suitable for applications in networking, telecommunications, and industrial control systems requiring high-speed data buffering. The operating temperature range is 0°C to 70°C.

Additional Information

Series: MCM69P618RoHS Status: Manufacturer Lead Time: Product Status: DiscontinuedPackaging: Datasheet:
Technical Details:
Width14.0000
TechnologyBICMOS
Length20.0000
Access_Time_Max6.0000000000000000
JESD_30_CodeR-PQFP-G100
Memory_Density1179648.0000000000000000
Memory_IC_TypeCACHE SRAM
Memory_Organization64KX18
Memory_Width18
Number_of_Functions1
Number_of_Terminals100
Number_of_Words65536.0000000000000000
Number_of_Words_Code64k
Operating_ModeSynchronous
Operating_Temperature_Max70.0
Operating_Temperature_Min0.0
Package_Body_MaterialPLASTIC/EPOXY
Package_CodeLQFP
Package_ShapeRectangular
Package_StyleFLATPACK, LOW PROFILE
Parallel_SerialParallel
Seated_Height_Max1.6000
Supply_Voltage_Max3.60000
Supply_Voltage_Min3.13500
Supply_Voltage_Nom3.3
Surface_MountYes
Terminal_FormGull Wing
Terminal_Pitch0.650
Terminal_PositionQUAD

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