MCM69L819AZP9R
Cache SRAM, 256KX18, 9ns, BICMOS, PBGA119Manufacturer: NXP Semiconductors
Categories: SRAMs
Quality Control: Learn More
NXP Semiconductors MCM69L819AZP9R is a 4Mbit (256K x 18) Cache SRAM featuring a 9ns access time. This BICMOS technology component operates synchronously and is housed in a 119-ball PBGA package (R-PBGA-B119) with a 1.27mm terminal pitch. It supports a supply voltage range of 3.15V to 3.60V, with a nominal of 3.3V, and operates within a temperature range of 0°C to 70°C. The MCM69L819 series is utilized in high-performance computing, networking infrastructure, and advanced consumer electronics applications requiring fast data buffering.
Additional Information
Series: MCM69L819RoHS Status: Manufacturer Lead Time: Product Status: DiscontinuedPackaging: Datasheet:Download Free CAD Model:
Technical Details:
| Length | 22.0000 |
| Width | 14.0000 |
| Technology | BICMOS |
| Access_Time_Max | 9.0000000000000000 |
| JESD_30_Code | R-PBGA-B119 |
| Memory_Density | 4718592.0000000000000000 |
| Memory_IC_Type | CACHE SRAM |
| Memory_Organization | 256KX18 |
| Memory_Width | 18 |
| Number_of_Functions | 1 |
| Number_of_Terminals | 119 |
| Number_of_Words | 262144.0000000000000000 |
| Number_of_Words_Code | 256k |
| Operating_Mode | Synchronous |
| Operating_Temperature_Max | 70.0 |
| Operating_Temperature_Min | 0.0 |
| Package_Body_Material | PLASTIC/EPOXY |
| Package_Code | BGA |
| Package_Shape | Rectangular |
| Package_Style | GRID ARRAY |
| Parallel_Serial | Parallel |
| Seated_Height_Max | 2.4000 |
| Supply_Voltage_Max | 3.60000 |
| Supply_Voltage_Min | 3.15000 |
| Supply_Voltage_Nom | 3.3 |
| Surface_Mount | Yes |
| Terminal_Form | Ball |
| Terminal_Pitch | 1.270 |
| Terminal_Position | Bottom |
Request a Quote
Clients Also Buy
MCM63P819KZP166R
Cache SRAM, 256KX18, 3.5ns, CMOS, PBGA119
MCM63P819KTQ133R
Cache SRAM, 256KX18, 4ns, CMOS, PQFP100
MCM69R738AZP5
Late-Write SRAM, 128KX36, 2.5ns, BICMOS, PBGA119
