MCM69L818CZP6.5
Late-Write SRAM, 256KX18, 6.5ns, BICMOS, PBGA119Manufacturer: NXP Semiconductors
Categories: SRAMs
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The NXP Semiconductors MCM69L818CZP6-5 is a 256K x 18 Late-Write BICMOS SRAM. This synchronous memory device offers a maximum access time of 6.5ns and operates from a 3.3V supply. Its architecture is optimized for high-speed data buffering and caching applications. The component is housed in a PBGA119 package featuring a 1.27mm terminal pitch and a rectangular body measuring 14.00mm x 22.00mm with a maximum seated height of 2.40mm. This memory solution is suitable for demanding applications in networking, telecommunications, and industrial automation where low latency and high throughput are critical. The operating temperature range is 0°C to 70°C.
Additional Information
Series: MCM69L818RoHS Status: Manufacturer Lead Time: Product Status: DiscontinuedPackaging: Datasheet:Download Free CAD Model:
Technical Details:
| Length | 22.0000 |
| Width | 14.0000 |
| Technology | BICMOS |
| Access_Time_Max | 6.5000000000000000 |
| JESD_30_Code | R-PBGA-B119 |
| Memory_Density | 4718592.0000000000000000 |
| Memory_IC_Type | LATE-WRITE SRAM |
| Memory_Organization | 256KX18 |
| Memory_Width | 18 |
| Number_of_Functions | 1 |
| Number_of_Terminals | 119 |
| Number_of_Words | 262144.0000000000000000 |
| Number_of_Words_Code | 256k |
| Operating_Mode | Synchronous |
| Operating_Temperature_Max | 70.0 |
| Operating_Temperature_Min | 0.0 |
| Package_Body_Material | PLASTIC/EPOXY |
| Package_Code | BGA |
| Package_Shape | Rectangular |
| Package_Style | GRID ARRAY |
| Parallel_Serial | Parallel |
| Seated_Height_Max | 2.4000 |
| Supply_Voltage_Max | 3.60000 |
| Supply_Voltage_Min | 3.13500 |
| Supply_Voltage_Nom | 3.3 |
| Surface_Mount | Yes |
| Terminal_Form | Ball |
| Terminal_Pitch | 1.270 |
| Terminal_Position | Bottom |
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