MCM69L818CZP5.5R
Late-Write SRAM, 256KX18, 5.5ns, BICMOS, PBGA119Manufacturer: NXP Semiconductors
Categories: SRAMs
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NXP Semiconductors MCM69L818CZP5-5R is a high-performance Late-Write SRAM featuring a 256K x 18 organization. This memory component operates with a maximum access time of 5.5 ns, utilizing BICMOS technology for enhanced speed and efficiency. The MCM69L818 series device is housed in a 119-ball PBGA package (R-PBGA-B119) with a 1.27 mm terminal pitch, designed for surface mounting. It supports synchronous operation and is rated for an operating temperature range of 0°C to 70°C, with a nominal supply voltage of 3.3V (3.135V to 3.6V). Applications for this component span high-speed data buffering, buffer memory in networking equipment, and cache memory in advanced processing systems.
Additional Information
Series: MCM69L818RoHS Status: Manufacturer Lead Time: Product Status: DiscontinuedPackaging: Datasheet:Download Free CAD Model:
Technical Details:
| Length | 22.0000 |
| Width | 14.0000 |
| Technology | BICMOS |
| Access_Time_Max | 5.5000000000000000 |
| JESD_30_Code | R-PBGA-B119 |
| Memory_Density | 4718592.0000000000000000 |
| Memory_IC_Type | LATE-WRITE SRAM |
| Memory_Organization | 256KX18 |
| Memory_Width | 18 |
| Number_of_Functions | 1 |
| Number_of_Terminals | 119 |
| Number_of_Words | 262144.0000000000000000 |
| Number_of_Words_Code | 256k |
| Operating_Mode | Synchronous |
| Operating_Temperature_Max | 70.0 |
| Operating_Temperature_Min | 0.0 |
| Package_Body_Material | PLASTIC/EPOXY |
| Package_Code | BGA |
| Package_Shape | Rectangular |
| Package_Style | GRID ARRAY |
| Parallel_Serial | Parallel |
| Seated_Height_Max | 2.4000 |
| Supply_Voltage_Max | 3.60000 |
| Supply_Voltage_Min | 3.13500 |
| Supply_Voltage_Nom | 3.3 |
| Surface_Mount | Yes |
| Terminal_Form | Ball |
| Terminal_Pitch | 1.270 |
| Terminal_Position | Bottom |
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