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MCM69L736CZP5.5R

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MCM69L736CZP5.5R

Late-Write SRAM, 128KX36, 5.5ns, BICMOS, PBGA119

Manufacturer: NXP Semiconductors

Categories: SRAMs

Quality Control: Learn More

NXP Semiconductors MCM69L736CZP5-5R is a BICMOS Late-Write SRAM featuring a 128K x 36 memory organization. This component offers a maximum access time of 5.5 ns and operates with a supply voltage range of 3.135V to 3.6V, nominal at 3.3V. The MCM69L736 series device is packaged in a 119-ball PBGA (R-PBGA-B119) with a terminal pitch of 1.270mm. Its operating temperature range is 0°C to 70°C. This synchronous SRAM is suitable for high-performance applications across telecommunications, networking, and industrial automation sectors. The device measures 22.00mm in length and 14.00mm in width, with a maximum seated height of 2.40mm.

Additional Information

Series: MCM69L736RoHS Status: Manufacturer Lead Time: Product Status: DiscontinuedPackaging: Datasheet:
Technical Details:
Length22.0000
Width14.0000
TechnologyBICMOS
Access_Time_Max5.5000000000000000
JESD_30_CodeR-PBGA-B119
Memory_Density4718592.0000000000000000
Memory_IC_TypeLATE-WRITE SRAM
Memory_Organization128KX36
Memory_Width36
Number_of_Functions1
Number_of_Terminals119
Number_of_Words131072.0000000000000000
Number_of_Words_Code128K
Operating_ModeSynchronous
Operating_Temperature_Max70.0
Operating_Temperature_Min0.0
Package_Body_MaterialPLASTIC/EPOXY
Package_CodeBGA
Package_ShapeRectangular
Package_StyleGRID ARRAY
Parallel_SerialParallel
Seated_Height_Max2.4000
Supply_Voltage_Max3.60000
Supply_Voltage_Min3.13500
Supply_Voltage_Nom3.3
Surface_MountYes
Terminal_FormBall
Terminal_Pitch1.270
Terminal_PositionBottom

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