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MCM69F819TQ11

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MCM69F819TQ11

Cache SRAM, 256KX18, 11ns, CMOS, PQFP100

Manufacturer: NXP Semiconductors

Categories: SRAMs

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NXP Semiconductors MCM69F819TQ11 is a synchronous CMOS Cache SRAM from the MCM69F819 series. This component features a memory organization of 256K words by 18 bits, providing a total memory density of 4.7 Megabits. With a maximum access time of 11ns, it supports a flow-through architecture for high-speed data operations. The MCM69F819TQ11 operates within a supply voltage range of 3.135V to 3.6V, with a nominal voltage of 3.3V, and is rated for an operating temperature range of 0°C to 70°C. It is housed in a 100-pin PQFP (Plastic Quad Flat Pack) package with a terminal pitch of 0.65mm, suitable for surface mounting. This SRAM is commonly utilized in applications requiring fast data buffering and retrieval, such as within networking equipment, industrial automation systems, and high-performance computing platforms.

Additional Information

Series: MCM69F819RoHS Status: Manufacturer Lead Time: Product Status: DiscontinuedPackaging: Datasheet:
Technical Details:
Length20.0000
Width14.0000
TechnologyCMOS
Access_Time_Max11.0000000000000000
Additional_FeatureFLOW-THROUGH
JESD_30_CodeR-PQFP-G100
Memory_Density4718592.0000000000000000
Memory_IC_TypeCACHE SRAM
Memory_Organization256KX18
Memory_Width18
Number_of_Functions1
Number_of_Terminals100
Number_of_Words262144.0000000000000000
Number_of_Words_Code256k
Operating_ModeSynchronous
Operating_Temperature_Max70.0
Operating_Temperature_Min0.0
Package_Body_MaterialPLASTIC/EPOXY
Package_CodeLQFP
Package_ShapeRectangular
Package_StyleFLATPACK, LOW PROFILE
Parallel_SerialParallel
Seated_Height_Max1.6000
Supply_Voltage_Max3.60000
Supply_Voltage_Min3.13500
Supply_Voltage_Nom3.3
Surface_MountYes
Terminal_FormGull Wing
Terminal_Pitch0.650
Terminal_PositionQUAD

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