MCM67M618AFN9
Cache SRAM, 64KX18, 9ns, BICMOS, PQCC52Manufacturer: NXP Semiconductors
Categories: SRAMs
Quality Control: Learn More
NXP Semiconductors MCM67M618AFN9 is a 64K x 18 synchronous Cache SRAM featuring a 9ns access time. This BICMOS device is housed in a 52-lead S-PQCC-J52 plastic chip carrier package with J-bend terminals. With a memory density of 1.179 Mbits and operating at a nominal 5V supply voltage (4.75V to 5.25V), it is designed for high-speed data buffering applications. Its parallel interface and robust construction make it suitable for use in telecommunications infrastructure, networking equipment, and high-performance computing systems. The operating temperature range is 0°C to 70°C.
Additional Information
Series: MCM67M618RoHS Status: Manufacturer Lead Time: Product Status: DiscontinuedPackaging: Datasheet:Download Free CAD Model:
Technical Details:
| Width | 19.1250 |
| Technology | BICMOS |
| Length | 19.1250 |
| Access_Time_Max | 9.0000000000000000 |
| JESD_30_Code | S-PQCC-J52 |
| Memory_Density | 1179648.0000000000000000 |
| Memory_IC_Type | CACHE SRAM |
| Memory_Organization | 64KX18 |
| Memory_Width | 18 |
| Number_of_Functions | 1 |
| Number_of_Terminals | 52 |
| Number_of_Words | 65536.0000000000000000 |
| Number_of_Words_Code | 64k |
| Operating_Mode | Synchronous |
| Operating_Temperature_Max | 70.0 |
| Operating_Temperature_Min | 0.0 |
| Package_Body_Material | PLASTIC/EPOXY |
| Package_Code | QCCJ |
| Package_Shape | Square |
| Package_Style | CHIP CARRIER |
| Parallel_Serial | Parallel |
| Seated_Height_Max | 4.5700 |
| Supply_Voltage_Max | 5.25000 |
| Supply_Voltage_Min | 4.75000 |
| Supply_Voltage_Nom | 5 |
| Surface_Mount | Yes |
| Terminal_Form | J BEND |
| Terminal_Pitch | 1.270 |
| Terminal_Position | QUAD |
Request a Quote
Clients Also Buy
MCM67M618BFN9
Cache SRAM, 64KX18, 9ns, BICMOS, PQCC52
MCM63P819KZP166R
Cache SRAM, 256KX18, 3.5ns, CMOS, PBGA119
MCM63P819KTQ133R
Cache SRAM, 256KX18, 4ns, CMOS, PQFP100
