MCM67B618BFN9
Cache SRAM, 64KX18, 9ns, BICMOS, PQCC52Manufacturer: NXP Semiconductors
Categories: SRAMs
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NXP Semiconductors MCM67B618BFN9 is a BICMOS Cache SRAM with a memory organization of 64K x 18, offering a total density of 1179648 bits. This synchronous memory component features a maximum access time of 9ns. Designed for surface mounting, it is housed in a 52-terminal S-PQCC-J52 plastic chip carrier package with J-bend terminals. The operating supply voltage ranges from 4.75V to 5.25V, with a nominal value of 5V. Operating temperature is specified from 0°C to 70°C. This component is suitable for applications in networking, computing, and telecommunications infrastructure.
Additional Information
Series: MCM67B618RoHS Status: Manufacturer Lead Time: Product Status: DiscontinuedPackaging: Datasheet:Download Free CAD Model:
Technical Details:
| Width | 19.1262 |
| Technology | BICMOS |
| Length | 19.1262 |
| Access_Time_Max | 9.0000000000000000 |
| JESD_30_Code | S-PQCC-J52 |
| Memory_Density | 1179648.0000000000000000 |
| Memory_IC_Type | CACHE SRAM |
| Memory_Organization | 64KX18 |
| Memory_Width | 18 |
| Number_of_Functions | 1 |
| Number_of_Terminals | 52 |
| Number_of_Words | 65536.0000000000000000 |
| Number_of_Words_Code | 64k |
| Operating_Mode | Synchronous |
| Operating_Temperature_Max | 70.0 |
| Operating_Temperature_Min | 0.0 |
| Package_Body_Material | PLASTIC/EPOXY |
| Package_Code | QCCJ |
| Package_Shape | Square |
| Package_Style | CHIP CARRIER |
| Parallel_Serial | Parallel |
| Supply_Voltage_Max | 5.25000 |
| Supply_Voltage_Min | 4.75000 |
| Supply_Voltage_Nom | 5 |
| Surface_Mount | Yes |
| Terminal_Form | J BEND |
| Terminal_Pitch | 1.270 |
| Terminal_Position | QUAD |
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