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MCM64Z836ZP7

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MCM64Z836ZP7

ZBT SRAM, 256KX36, 7ns, CMOS, PBGA119

Manufacturer: NXP Semiconductors

Categories: SRAMs

Quality Control: Learn More

NXP Semiconductors MCM64Z836ZP7 is a synchronous ZBT SRAM component with a memory organization of 256K words by 36 bits, providing a total density of 9 Megabits. This device features a maximum access time of 7 ns and operates within a supply voltage range of 2.3 V to 2.7 V, with a nominal voltage of 2.5 V. The MCM64Z836 series utilizes CMOS technology and is housed in a 119-ball PBGA package with a 1.27 mm terminal pitch. Key specifications include a standby current of 10 mA and a supply current of 270 mA. This component is suitable for applications in networking, telecommunications, and high-performance computing systems.

Additional Information

Series: MCM64Z836RoHS Status: Manufacturer Lead Time: Product Status: DiscontinuedPackaging: Datasheet:
Technical Details:
Length22.0000
Width14.0000
TechnologyCMOS
Access_Time_Max7.0000000000000000
I_O_TypeCOMMON
JESD_30_CodeR-PBGA-B119
Memory_Density9437184.0000000000000000
Memory_IC_TypeZBT SRAM
Memory_Organization256KX36
Memory_Width36
Number_of_Functions1
Number_of_Terminals119
Number_of_Words262144.0000000000000000
Number_of_Words_Code256k
Operating_ModeSynchronous
Operating_Temperature_Max70.0
Operating_Temperature_Min0.0
Output_Characteristics3-State
Package_Body_MaterialPLASTIC/EPOXY
Package_CodeBGA
Package_Equivalence_CodeBGA119,7X17,50
Package_ShapeRectangular
Package_StyleGRID ARRAY
Parallel_SerialSerial
Seated_Height_Max2.4000
Standby_Current_Max0.010000000000000
Standby_Voltage_Min2.300000
Supply_Current_Max270.000000000000000
Supply_Voltage_Max2.70000
Supply_Voltage_Min2.30000
Supply_Voltage_Nom2.5
Surface_MountYes
Terminal_FormBall
Terminal_Pitch1.270
Terminal_PositionBottom

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