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MCM64Z836TQ8.5R

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MCM64Z836TQ8.5R

ZBT SRAM, 256KX36, 8.5ns, CMOS, PQFP100

Manufacturer: NXP Semiconductors

Categories: SRAMs

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NXP Semiconductors MCM64Z836TQ8-5R is a 256K x 36 ZBT SRAM, offering 9.4 Megabits of memory capacity. This synchronous memory device features an access time of 8.5 ns and operates with CMOS technology. The MCM64Z836 series utilizes a PQFP100 package with a 0.65 mm terminal pitch, designed for surface mounting. Its common I/O type and 3-state output characteristics facilitate integration into complex digital systems. Operating within a temperature range of 0°C to 70°C, it requires a supply voltage between 2.3V and 2.7V, with a nominal 2.5V. This component is suitable for applications requiring high-speed data buffering and storage, commonly found in networking equipment, telecommunications infrastructure, and high-performance computing. The 256K x 36 organization provides a flexible memory architecture for demanding digital designs.

Additional Information

Series: MCM64Z836RoHS Status: Manufacturer Lead Time: Product Status: DiscontinuedPackaging: Datasheet:
Technical Details:
Length20.0000
Width14.0000
TechnologyCMOS
Access_Time_Max8.5000000000000000
I_O_TypeCOMMON
JESD_30_CodeR-PQFP-G100
Memory_Density9437184.0000000000000000
Memory_IC_TypeZBT SRAM
Memory_Organization256KX36
Memory_Width36
Number_of_Functions1
Number_of_Terminals100
Number_of_Words262144.0000000000000000
Number_of_Words_Code256k
Operating_ModeSynchronous
Operating_Temperature_Max70.0
Operating_Temperature_Min0.0
Output_Characteristics3-State
Package_Body_MaterialPLASTIC/EPOXY
Package_CodeLQFP
Package_Equivalence_CodeQFP100,.63X.87
Package_ShapeRectangular
Package_StyleFLATPACK, LOW PROFILE
Parallel_SerialSerial
Seated_Height_Max1.6000
Standby_Current_Max0.010000000000000
Standby_Voltage_Min2.300000
Supply_Current_Max250.000000000000000
Supply_Voltage_Max2.70000
Supply_Voltage_Min2.30000
Supply_Voltage_Nom2.5
Surface_MountYes
Terminal_FormGull Wing
Terminal_Pitch0.650
Terminal_PositionQUAD

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