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MCM64Z834ZP10R

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MCM64Z834ZP10R

ZBT SRAM, 256KX36, 10ns, CMOS, PBGA119

Manufacturer: NXP Semiconductors

Categories: SRAMs

Quality Control: Learn More

NXP Semiconductors MCM64Z834ZP10R is a high-performance ZBT SRAM with a 256K x 36 memory organization. This CMOS component offers a maximum access time of 10 ns and operates with a supply voltage range of 2.3V to 2.7V, nominal 2.5V. The MCM64Z834 series device features a flow-through or pipelined architecture and utilizes a PBGA119 package with a 1.27mm terminal pitch, measuring 22.00mm x 14.00mm. Its 9.44 Mbit density and synchronous operation make it suitable for demanding applications in networking infrastructure, telecommunications, and high-speed data processing. The component is RoHS compliant and operates within a temperature range of 0°C to 70°C.

Additional Information

Series: MCM64Z834RoHS Status: Manufacturer Lead Time: Product Status: DiscontinuedPackaging: Datasheet:
Technical Details:
Length22.0000
Width14.0000
TechnologyCMOS
Access_Time_Max10.0000000000000000
Additional_FeatureFLOW-THROUGH OR PIPELINED ARCHTECTURE
I_O_TypeCOMMON
JESD_30_CodeR-PBGA-B119
Memory_Density9437184.0000000000000000
Memory_IC_TypeZBT SRAM
Memory_Organization256KX36
Memory_Width36
Number_of_Functions1
Number_of_Terminals119
Number_of_Words262144.0000000000000000
Number_of_Words_Code256k
Operating_ModeSynchronous
Operating_Temperature_Max70.0
Operating_Temperature_Min0.0
Output_Characteristics3-State
Package_Body_MaterialPLASTIC/EPOXY
Package_CodeBGA
Package_Equivalence_CodeBGA119,7X17,50
Package_ShapeRectangular
Package_StyleGRID ARRAY
Parallel_SerialParallel
Seated_Height_Max2.4000
Standby_Current_Max0.010000000000000
Standby_Voltage_Min2.300000
Supply_Voltage_Max2.70000
Supply_Voltage_Min2.30000
Supply_Voltage_Nom2.5
Surface_MountYes
Terminal_FormBall
Terminal_Pitch1.270
Terminal_PositionBottom

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