MCM64E918FC3.0
DDR SRAM, 512KX18, CMOS, PBGA153Manufacturer: NXP Semiconductors
Categories: SRAMs
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NXP Semiconductors MCM64E918FC3-0 is a high-performance DDR SRAM with a memory organization of 512K x 18 bits. This CMOS component operates synchronously and is housed in a 153-ball PBGA package (R-PBGA-B153) with a terminal pitch of 1.27mm. It features a memory density of 9Mb and a word count of 524,288. The operating voltage range is 2.375V to 2.625V, with an operating temperature range from 0°C to 70°C. This surface-mount device is suitable for demanding applications in areas such as telecommunications infrastructure, networking equipment, and high-speed computing systems. The MCM64E918 series offers robust performance characteristics for advanced memory solutions.
Additional Information
Series: MCM64E918RoHS Status: Manufacturer Lead Time: Product Status: ActivePackaging: Datasheet:Download Free CAD Model:
Technical Details:
| Width | 14.0000 |
| Technology | CMOS |
| Length | 22.0000 |
| JESD_30_Code | R-PBGA-B153 |
| Memory_Density | 9437184.0000000000000000 |
| Memory_IC_Type | DDR SRAM |
| Memory_Organization | 512KX18 |
| Memory_Width | 18 |
| Number_of_Functions | 1 |
| Number_of_Terminals | 153 |
| Number_of_Words | 524288.0000000000000000 |
| Number_of_Words_Code | 512k |
| Operating_Mode | Synchronous |
| Operating_Temperature_Max | 70.0 |
| Operating_Temperature_Min | 0.0 |
| Package_Body_Material | PLASTIC/EPOXY |
| Package_Code | BGA |
| Package_Shape | Rectangular |
| Package_Style | GRID ARRAY |
| Parallel_Serial | Parallel |
| Seated_Height_Max | 2.7700 |
| Supply_Voltage_Max | 2.62500 |
| Supply_Voltage_Min | 2.37500 |
| Surface_Mount | Yes |
| Terminal_Form | Ball |
| Terminal_Pitch | 1.270 |
| Terminal_Position | Bottom |
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