MCM64E836FC3.0R
DDR SRAM, 256KX36, CMOS, PBGA153Manufacturer: NXP Semiconductors
Categories: SRAMs
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NXP Semiconductors MCM64E836FC3-0R is a 256K x 36 DDR SRAM featuring CMOS technology within a 153-ball PBGA package. This synchronous memory component operates with a supply voltage range of 2.375V to 2.625V and a temperature range of 0°C to 70°C. Its memory density is 9 Megabits, organized as 256K words by 36 bits. The component utilizes a ball grid array (BGA) package with a terminal pitch of 1.27mm, suitable for surface mounting. This type of high-speed memory is commonly employed in networking infrastructure, telecommunications equipment, and high-performance computing applications.
Additional Information
Series: MCM64E836RoHS Status: Manufacturer Lead Time: Product Status: DiscontinuedPackaging: Datasheet:Download Free CAD Model:
Technical Details:
| Length | 22.0000 |
| Width | 14.0000 |
| Technology | CMOS |
| JESD_30_Code | R-PBGA-B153 |
| Memory_Density | 9437184.0000000000000000 |
| Memory_IC_Type | DDR SRAM |
| Memory_Organization | 256KX36 |
| Memory_Width | 36 |
| Number_of_Functions | 1 |
| Number_of_Terminals | 153 |
| Number_of_Words | 262144.0000000000000000 |
| Number_of_Words_Code | 256k |
| Operating_Mode | Synchronous |
| Operating_Temperature_Max | 70.0 |
| Operating_Temperature_Min | 0.0 |
| Package_Body_Material | PLASTIC/EPOXY |
| Package_Code | BGA |
| Package_Shape | Rectangular |
| Package_Style | GRID ARRAY |
| Parallel_Serial | Parallel |
| Seated_Height_Max | 2.7700 |
| Supply_Voltage_Max | 2.62500 |
| Supply_Voltage_Min | 2.37500 |
| Surface_Mount | Yes |
| Terminal_Form | Ball |
| Terminal_Pitch | 1.270 |
| Terminal_Position | Bottom |
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