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MCM63Z916ZP10

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MCM63Z916ZP10

ZBT SRAM, 512KX18, 10ns, CMOS, PBGA119

Manufacturer: NXP Semiconductors

Categories: SRAMs

Quality Control: Learn More

NXP Semiconductors MCM63Z916 series component MCM63Z916ZP10 is a 9Mbit ZBT SRAM with a 512K x 18 memory organization. This CMOS device offers a maximum access time of 10ns and operates with a 3.3V nominal supply voltage. Featuring a PBGA119 package with a 1.27mm terminal pitch, it supports flow-through or pipelined architectures. The MCM63Z916ZP10 is suitable for applications requiring high-speed synchronous data access in areas such as networking infrastructure, telecommunications systems, and high-performance computing. Its 119-ball grid array package facilitates dense board designs.

Additional Information

Series: MCM63Z916RoHS Status: Manufacturer Lead Time: Product Status: DiscontinuedPackaging: Datasheet:
Technical Details:
Length22.0000
Width14.0000
TechnologyCMOS
Access_Time_Max10.0000000000000000
Additional_FeatureFLOW-THROUGH OR PIPELINED ARCHTECTURE
I_O_TypeCOMMON
JESD_30_CodeR-PBGA-B119
Memory_Density9437184.0000000000000000
Memory_IC_TypeZBT SRAM
Memory_Organization512KX18
Memory_Width18
Number_of_Functions1
Number_of_Terminals119
Number_of_Words524288.0000000000000000
Number_of_Words_Code512k
Operating_ModeSynchronous
Operating_Temperature_Max70.0
Operating_Temperature_Min0.0
Output_Characteristics3-State
Package_Body_MaterialPLASTIC/EPOXY
Package_CodeBGA
Package_Equivalence_CodeBGA119,7X17,50
Package_ShapeRectangular
Package_StyleGRID ARRAY
Parallel_SerialParallel
Seated_Height_Max2.4000
Standby_Voltage_Min3.140000
Supply_Voltage_Max3.46500
Supply_Voltage_Min3.13500
Supply_Voltage_Nom3.3
Surface_MountYes
Terminal_FormBall
Terminal_Pitch1.270
Terminal_PositionBottom

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