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MCM63Z916TQ11

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MCM63Z916TQ11

ZBT SRAM, 512KX18, 11ns, CMOS, PQFP100

Manufacturer: NXP Semiconductors

Categories: SRAMs

Quality Control: Learn More

NXP Semiconductors MCM63Z916TQ11 is a 512K x 18 ZBT SRAM featuring an 11ns maximum access time. This synchronous memory device operates in CMOS technology and supports both flow-through and pipelined architectures with common I/O. The MCM63Z916TQ11 is housed in a 100-terminal PQFP (R-PQFP-G100) package with a 0.65mm terminal pitch, offering a low-profile rectangular form factor. Operating from a 3.3V nominal supply voltage range of 3.135V to 3.465V, it provides 3-state output characteristics. This component is suitable for applications in networking, telecommunications, and high-speed data processing systems. The operating temperature range is 0°C to 70°C.

Additional Information

Series: MCM63Z916RoHS Status: Manufacturer Lead Time: Product Status: DiscontinuedPackaging: Datasheet:
Technical Details:
Length20.0000
Width14.0000
TechnologyCMOS
Access_Time_Max11.0000000000000000
Additional_FeatureFLOW-THROUGH OR PIPELINED ARCHTECTURE
I_O_TypeCOMMON
JESD_30_CodeR-PQFP-G100
Memory_Density9437184.0000000000000000
Memory_IC_TypeZBT SRAM
Memory_Organization512KX18
Memory_Width18
Number_of_Functions1
Number_of_Terminals100
Number_of_Words524288.0000000000000000
Number_of_Words_Code512k
Operating_ModeSynchronous
Operating_Temperature_Max70.0
Operating_Temperature_Min0.0
Output_Characteristics3-State
Package_Body_MaterialPLASTIC/EPOXY
Package_CodeLQFP
Package_Equivalence_CodeQFP100,.63X.87
Package_ShapeRectangular
Package_StyleFLATPACK, LOW PROFILE
Parallel_SerialParallel
Seated_Height_Max1.6000
Standby_Voltage_Min3.140000
Supply_Voltage_Max3.46500
Supply_Voltage_Min3.13500
Supply_Voltage_Nom3.3
Surface_MountYes
Terminal_FormGull Wing
Terminal_Pitch0.650
Terminal_PositionQUAD

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