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MCM63Z836ZP8.5R

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MCM63Z836ZP8.5R

ZBT SRAM, 256KX36, 8.5ns, CMOS, PBGA119

Manufacturer: NXP Semiconductors

Categories: SRAMs

Quality Control: Learn More

NXP Semiconductors MCM63Z836 series ZBT SRAM, part number MCM63Z836ZP8-5R, offers a 256K x 36 memory organization with a maximum access time of 8.5 ns. This synchronous SRAM utilizes CMOS technology and comes in a 119-ball PBGA package (R-PBGA-B119) with a low profile and fine pitch. The component supports both flow-through and pipelined architectures, operating within a voltage range of 3.135V to 3.465V. Its 9Mbit density and parallel interface make it suitable for high-performance applications across various industries including telecommunications, networking infrastructure, and industrial automation where high-speed data buffering and memory access are critical. The operating temperature range is 0°C to 70°C.

Additional Information

Series: MCM63Z836RoHS Status: Manufacturer Lead Time: Product Status: DiscontinuedPackaging: Datasheet:
Technical Details:
Length20.0000
Width14.0000
TechnologyCMOS
Access_Time_Max8.5000000000000000
Additional_FeatureFLOW-THROUGH OR PIPELINED ARCHTECTURE
JESD_30_CodeR-PBGA-B119
Memory_Density9437184.0000000000000000
Memory_IC_TypeZBT SRAM
Memory_Organization256KX36
Memory_Width36
Number_of_Functions1
Number_of_Terminals119
Number_of_Words262144.0000000000000000
Number_of_Words_Code256k
Operating_ModeSynchronous
Operating_Temperature_Max70.0
Operating_Temperature_Min0.0
Package_Body_MaterialPLASTIC/EPOXY
Package_CodeLFBGA
Package_ShapeRectangular
Package_StyleGRID ARRAY, LOW PROFILE, FINE PITCH
Parallel_SerialParallel
Seated_Height_Max1.6000
Supply_Voltage_Max3.46500
Supply_Voltage_Min3.13500
Supply_Voltage_Nom3.3
Surface_MountYes
Terminal_FormBall
Terminal_Pitch0.650
Terminal_PositionBottom

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