MCM63R918FC3.7
Late-Write SRAM, 512KX18, 1.85ns, CMOS, PBGA119Manufacturer: NXP Semiconductors
Categories: SRAMs
Quality Control: Learn More
NXP Semiconductors MCM63R918FC3-7 is a 512K x 18 late-write synchronous SRAM. This CMOS component offers a maximum access time of 1.85ns and operates from a 2.375V to 3.60V supply. It features a 119-ball PBGA package with a 1.27mm terminal pitch, measuring 14mm x 22mm with a maximum seated height of 2.77mm. The device operates within a temperature range of 0°C to 70°C. Applications for this memory device are found in high-speed networking, telecommunications infrastructure, and industrial automation systems.
Additional Information
Series: MCM63R918RoHS Status: Manufacturer Lead Time: Product Status: ActivePackaging: Datasheet:Download Free CAD Model:
Technical Details:
| Width | 14.0000 |
| Technology | CMOS |
| Length | 22.0000 |
| Access_Time_Max | 1.8500000000000000 |
| JESD_30_Code | R-PBGA-B119 |
| Memory_Density | 9437184.0000000000000000 |
| Memory_IC_Type | LATE-WRITE SRAM |
| Memory_Organization | 512KX18 |
| Memory_Width | 18 |
| Number_of_Functions | 1 |
| Number_of_Terminals | 119 |
| Number_of_Words | 524288.0000000000000000 |
| Number_of_Words_Code | 512k |
| Operating_Mode | Synchronous |
| Operating_Temperature_Max | 70.0 |
| Operating_Temperature_Min | 0.0 |
| Package_Body_Material | PLASTIC/EPOXY |
| Package_Code | BGA |
| Package_Shape | Rectangular |
| Package_Style | GRID ARRAY |
| Parallel_Serial | Parallel |
| Seated_Height_Max | 2.7700 |
| Supply_Voltage_Max | 3.60000 |
| Supply_Voltage_Min | 2.37500 |
| Surface_Mount | Yes |
| Terminal_Form | Ball |
| Terminal_Pitch | 1.270 |
| Terminal_Position | Bottom |
Request a Quote
Clients Also Buy
MCM63R918FC3.3R
Late-Write SRAM, 512KX18, 1.65ns, CMOS, PBGA119
MCM63R918FC3.7R
Late-Write SRAM, 512KX18, 1.85ns, CMOS, PBGA119
MCM63R918FC4.0R
Late-Write SRAM, 512KX18, 2ns, CMOS, PBGA119