MCM63R918AFC3.0
Late-Write SRAM, 512KX18, 1.5ns, CMOS, PBGA119Manufacturer: NXP Semiconductors
Categories: SRAMs
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NXP Semiconductors MCM63R918AFC3-0 is a Late-Write SRAM with a memory organization of 512K x 18 bits. This synchronous memory device offers a maximum access time of 1.5 nanoseconds, leveraging CMOS technology for efficient operation. The component features a 119-ball PBGA package (R-PBGA-B119) with a 1.27mm terminal pitch, designed for surface mounting. Operating within a supply voltage range of 2.375V to 3.6V, with a nominal voltage of 2.5V, it supports a wide array of applications. This SRAM is suitable for high-performance systems in industries such as telecommunications, networking, and computing, where fast data buffering and storage are critical. The MCM63R918 series provides robust memory solutions for demanding electronic designs.
Additional Information
Series: MCM63R918RoHS Status: Manufacturer Lead Time: Product Status: DiscontinuedPackaging: Datasheet:Download Free CAD Model:
Technical Details:
| Length | 22.0000 |
| Width | 14.0000 |
| Technology | CMOS |
| Access_Time_Max | 1.5000000000000000 |
| JESD_30_Code | R-PBGA-B119 |
| Memory_Density | 9437184.0000000000000000 |
| Memory_IC_Type | LATE-WRITE SRAM |
| Memory_Organization | 512KX18 |
| Memory_Width | 18 |
| Number_of_Functions | 1 |
| Number_of_Terminals | 119 |
| Number_of_Words | 524288.0000000000000000 |
| Number_of_Words_Code | 512k |
| Operating_Mode | Synchronous |
| Operating_Temperature_Max | 70.0 |
| Operating_Temperature_Min | 0.0 |
| Package_Body_Material | PLASTIC/EPOXY |
| Package_Code | BGA |
| Package_Shape | Rectangular |
| Package_Style | GRID ARRAY |
| Parallel_Serial | Parallel |
| Seated_Height_Max | 2.7700 |
| Supply_Voltage_Max | 3.60000 |
| Supply_Voltage_Min | 2.37500 |
| Supply_Voltage_Nom | 2.5 |
| Surface_Mount | Yes |
| Terminal_Form | Ball |
| Terminal_Pitch | 1.270 |
| Terminal_Position | Bottom |
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