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MCM63R836FC4.0

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MCM63R836FC4.0

Late-Write SRAM, 256KX36, 4ns, CMOS, PBGA119

Manufacturer: NXP Semiconductors

Categories: SRAMs

Quality Control: Learn More

NXP Semiconductors MCM63R836FC4-0 is a 256K x 36 Late-Write SRAM from the MCM63R836 series. This synchronous memory component features a maximum access time of 4.0 ns and operates using CMOS technology. The device is housed in a 119-ball PBGA package, specified by R-PBGA-B119, with a terminal pitch of 1.270 mm and a rectangular package shape measuring 22.00 mm by 14.00 mm. It supports a common I/O type and features 3-state outputs with an output enable function. The operating voltage range is from 2.375V to 3.600V, with a standby current of 175mA and a supply current up to 500mA. Operating temperatures range from 0°C to 70°C. This component is suitable for applications in networking, telecommunications, and high-performance computing.

Additional Information

Series: MCM63R836RoHS Status: Manufacturer Lead Time: Product Status: ActivePackaging: TrayDatasheet:
Technical Details:
Width14.0000
TechnologyCMOS
Length22.0000
Access_Time_Max4.0000000000000000
I_O_TypeCOMMON
JESD_30_CodeR-PBGA-B119
Memory_Density9437184.0000000000000000
Memory_IC_TypeLATE-WRITE SRAM
Memory_Organization256KX36
Memory_Width36
Number_of_Functions1
Number_of_Ports1
Number_of_Terminals119
Number_of_Words262144.0000000000000000
Number_of_Words_Code256k
Operating_ModeSynchronous
Operating_Temperature_Max70.0
Operating_Temperature_Min0.0
Output_Characteristics3-State
Output_EnableYes
Package_Body_MaterialPLASTIC/EPOXY
Package_CodeBGA
Package_Equivalence_CodeBGA119,7X17,50
Package_ShapeRectangular
Package_StyleGRID ARRAY
Parallel_SerialParallel
Seated_Height_Max2.7700
Standby_Current_Max0.175000000000000
Standby_Voltage_Min2.375000
Supply_Current_Max500.000000000000000
Supply_Voltage_Max3.60000
Supply_Voltage_Min2.37500
Surface_MountYes
Terminal_FormBall
Terminal_Pitch1.270
Terminal_PositionBottom

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