MCM63R836AFC3.7R
Late-Write SRAM, 256KX36, 1.85ns, CMOS, PBGA119Manufacturer: NXP Semiconductors
Categories: SRAMs
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The NXP Semiconductors MCM63R836AFC3-7R is a 256K x 36 Late-Write SRAM, featuring a maximum access time of 1.85ns. This CMOS component operates synchronously with a supply voltage range of 2.375V to 3.6V, typically 2.5V. Housed in a PBGA119 package (R-PBGA-B119), it offers a 14mm x 22mm footprint with 1.27mm terminal pitch. The MCM63R836 series component is designed for applications demanding high-speed data buffering and storage. Its specifications make it suitable for use in networking infrastructure, high-performance computing, and industrial automation systems where rapid data throughput is critical. The operating temperature range is 0°C to 70°C.
Additional Information
Series: MCM63R836RoHS Status: Manufacturer Lead Time: Product Status: ActivePackaging: Datasheet:Download Free CAD Model:
Technical Details:
| Length | 22.0000 |
| Width | 14.0000 |
| Technology | CMOS |
| Access_Time_Max | 1.8500000000000000 |
| JESD_30_Code | R-PBGA-B119 |
| Memory_Density | 9437184.0000000000000000 |
| Memory_IC_Type | LATE-WRITE SRAM |
| Memory_Organization | 256KX36 |
| Memory_Width | 36 |
| Number_of_Functions | 1 |
| Number_of_Terminals | 119 |
| Number_of_Words | 262144.0000000000000000 |
| Number_of_Words_Code | 256k |
| Operating_Mode | Synchronous |
| Operating_Temperature_Max | 70.0 |
| Operating_Temperature_Min | 0.0 |
| Package_Body_Material | PLASTIC/EPOXY |
| Package_Code | BGA |
| Package_Shape | Rectangular |
| Package_Style | GRID ARRAY |
| Parallel_Serial | Parallel |
| Seated_Height_Max | 2.7700 |
| Supply_Voltage_Max | 3.60000 |
| Supply_Voltage_Min | 2.37500 |
| Supply_Voltage_Nom | 2.5 |
| Surface_Mount | Yes |
| Terminal_Form | Ball |
| Terminal_Pitch | 1.270 |
| Terminal_Position | Bottom |
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