MCM63R818FC3.3
Late-Write SRAM, 256KX18, 1.65ns, CMOS, PBGA119Manufacturer: NXP Semiconductors
Categories: SRAMs
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The NXP Semiconductors MCM63R818FC3-3 is a Late-Write SRAM with a memory organization of 256K x 18. This component offers a maximum access time of 1.65ns, utilizing CMOS technology. It is packaged in a 119-ball PBGA (R-PBGA-B119) with a terminal pitch of 1.27mm. The device operates synchronously and supports a supply voltage range of 2.375V to 3.600V, with a nominal voltage of 2.5V. Operating temperature is specified from 0°C to 70°C. This high-speed synchronous SRAM is suitable for applications in networking infrastructure, telecommunications, and high-performance computing where low latency and high bandwidth are critical. The MCM63R818 series provides robust performance for demanding digital systems.
Additional Information
Series: MCM63R818RoHS Status: Manufacturer Lead Time: Product Status: DiscontinuedPackaging: Datasheet:Download Free CAD Model:
Technical Details:
| Width | 14.0000 |
| Technology | CMOS |
| Length | 22.0000 |
| Access_Time_Max | 1.6500000000000000 |
| JESD_30_Code | R-PBGA-B119 |
| Memory_Density | 4718592.0000000000000000 |
| Memory_IC_Type | LATE-WRITE SRAM |
| Memory_Organization | 256KX18 |
| Memory_Width | 18 |
| Number_of_Functions | 1 |
| Number_of_Terminals | 119 |
| Number_of_Words | 262144.0000000000000000 |
| Number_of_Words_Code | 256k |
| Operating_Mode | Synchronous |
| Operating_Temperature_Max | 70.0 |
| Operating_Temperature_Min | 0.0 |
| Package_Body_Material | PLASTIC/EPOXY |
| Package_Code | BGA |
| Package_Shape | Rectangular |
| Package_Style | GRID ARRAY |
| Parallel_Serial | Parallel |
| Seated_Height_Max | 2.7700 |
| Supply_Voltage_Max | 3.60000 |
| Supply_Voltage_Min | 2.37500 |
| Supply_Voltage_Nom | 2.5 |
| Surface_Mount | Yes |
| Terminal_Form | Ball |
| Terminal_Pitch | 1.270 |
| Terminal_Position | Bottom |
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