MCM63R736FC3.3
Late-Write SRAM, 128KX36, 1.65ns, CMOS, PBGA119Manufacturer: NXP Semiconductors
Categories: SRAMs
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NXP Semiconductors MCM63R736FC3-3 is a 4Mb CMOS Late-Write Synchronous SRAM. This component offers a 128K x 36 memory organization with a maximum access time of 1.65ns. Designed for high-speed data buffering and cache applications, it operates within a supply voltage range of 2.375V to 3.600V, with a nominal voltage of 2.5V. The MCM63R736 series device is housed in a PBGA119 package (R-PBGA-B119), featuring a rectangular form factor with a 1.27mm terminal pitch. Its construction utilizes plastic/epoxy for the package body material. This SRAM is suitable for use in networking infrastructure, telecommunications equipment, and high-performance computing systems.
Additional Information
Series: MCM63R736RoHS Status: Manufacturer Lead Time: Product Status: DiscontinuedPackaging: Datasheet:Download Free CAD Model:
Technical Details:
| Width | 14.0000 |
| Technology | CMOS |
| Length | 22.0000 |
| Access_Time_Max | 1.6500000000000000 |
| JESD_30_Code | R-PBGA-B119 |
| Memory_Density | 4718592.0000000000000000 |
| Memory_IC_Type | LATE-WRITE SRAM |
| Memory_Organization | 128KX36 |
| Memory_Width | 36 |
| Number_of_Functions | 1 |
| Number_of_Terminals | 119 |
| Number_of_Words | 131072.0000000000000000 |
| Number_of_Words_Code | 128K |
| Operating_Mode | Synchronous |
| Operating_Temperature_Max | 70.0 |
| Operating_Temperature_Min | 0.0 |
| Package_Body_Material | PLASTIC/EPOXY |
| Package_Code | BGA |
| Package_Shape | Rectangular |
| Package_Style | GRID ARRAY |
| Parallel_Serial | Parallel |
| Seated_Height_Max | 2.7700 |
| Supply_Voltage_Max | 3.60000 |
| Supply_Voltage_Min | 2.37500 |
| Supply_Voltage_Nom | 2.5 |
| Surface_Mount | Yes |
| Terminal_Form | Ball |
| Terminal_Pitch | 1.270 |
| Terminal_Position | Bottom |
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