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MCM63P919TQ166R

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MCM63P919TQ166R

Cache SRAM, 512KX18, 3.5ns, CMOS, PQFP100

Manufacturer: NXP Semiconductors

Categories: SRAMs

Quality Control: Learn More

NXP Semiconductors MCM63P919TQ166R is a synchronous Cache SRAM featuring a memory organization of 512K x 18 and a maximum access time of 3.5ns. This CMOS component operates at a maximum clock frequency of 166MHz and is housed in a 100-pin LQFP (R-PQFP-G100) package with a 0.65mm terminal pitch. The device supports a common I/O type and 3-state outputs, operating within a supply voltage range of 3.135V to 3.465V. It is designed for surface mounting and has a typical application in high-performance computing, networking infrastructure, and advanced consumer electronics where fast data buffering is critical. The MCM63P919 series offers a memory density of 9Mbit, ensuring ample capacity for demanding cache requirements.

Additional Information

Series: MCM63P919RoHS Status: Manufacturer Lead Time: Product Status: DiscontinuedPackaging: Datasheet:
Technical Details:
Length20.0000
Width14.0000
TechnologyCMOS
Access_Time_Max3.5000000000000000
Clock_Frequency_Max166.00000
I_O_TypeCOMMON
JESD_30_CodeR-PQFP-G100
Memory_Density9437184.0000000000000000
Memory_IC_TypeCACHE SRAM
Memory_Organization512KX18
Memory_Width18
Number_of_Functions1
Number_of_Terminals100
Number_of_Words524288.0000000000000000
Number_of_Words_Code512k
Operating_ModeSynchronous
Operating_Temperature_Max70.0
Operating_Temperature_Min0.0
Output_Characteristics3-State
Package_Body_MaterialPLASTIC/EPOXY
Package_CodeLQFP
Package_Equivalence_CodeQFP100,.63X.87
Package_ShapeRectangular
Package_StyleFLATPACK, LOW PROFILE
Parallel_SerialSerial
Seated_Height_Max1.6000
Standby_Voltage_Min3.140000
Supply_Voltage_Max3.46500
Supply_Voltage_Min3.13500
Supply_Voltage_Nom3.3
Surface_MountYes
Terminal_FormGull Wing
Terminal_Pitch0.650
Terminal_PositionQUAD

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