MCM63P837ZP225R
Cache SRAM, 256KX36, 2.6ns, CMOS, PBGA119Manufacturer: NXP Semiconductors
Categories: SRAMs
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The NXP Semiconductors MCM63P837ZP225R is a 9Mbit synchronous cache SRAM with a memory organization of 256K x 36. This component operates at a maximum clock frequency of 225MHz and offers an access time of 2.6ns, utilizing CMOS technology. It is housed in a 119-ball PBGA package with a 1.27mm terminal pitch, designed for surface mounting. The MCM63P837 series component supports a supply voltage range of 3.135V to 3.465V, with a nominal voltage of 3.3V. Its operating temperature range is from 0°C to 70°C. This high-performance memory is suitable for applications in networking infrastructure, high-performance computing, and advanced consumer electronics requiring fast data buffering.
Additional Information
Series: MCM63P837RoHS Status: Manufacturer Lead Time: Product Status: DiscontinuedPackaging: Datasheet:Download Free CAD Model:
Technical Details:
| Length | 22.0000 |
| Width | 14.0000 |
| Technology | CMOS |
| Access_Time_Max | 2.6000000000000000 |
| Clock_Frequency_Max | 225.00000 |
| I_O_Type | COMMON |
| JESD_30_Code | R-PBGA-B119 |
| Memory_Density | 9437184.0000000000000000 |
| Memory_IC_Type | CACHE SRAM |
| Memory_Organization | 256KX36 |
| Memory_Width | 36 |
| Number_of_Functions | 1 |
| Number_of_Terminals | 119 |
| Number_of_Words | 262144.0000000000000000 |
| Number_of_Words_Code | 256k |
| Operating_Mode | Synchronous |
| Operating_Temperature_Max | 70.0 |
| Operating_Temperature_Min | 0.0 |
| Output_Characteristics | 3-State |
| Package_Body_Material | PLASTIC/EPOXY |
| Package_Code | BGA |
| Package_Equivalence_Code | BGA119,7X17,50 |
| Package_Shape | Rectangular |
| Package_Style | GRID ARRAY |
| Parallel_Serial | Serial |
| Seated_Height_Max | 2.4000 |
| Standby_Voltage_Min | 3.140000 |
| Supply_Voltage_Max | 3.46500 |
| Supply_Voltage_Min | 3.13500 |
| Supply_Voltage_Nom | 3.3 |
| Surface_Mount | Yes |
| Terminal_Form | Ball |
| Terminal_Pitch | 1.270 |
| Terminal_Position | Bottom |
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