MCM63P837ZP200
Cache SRAM, 256KX36, 3ns, CMOS, PBGA119Manufacturer: NXP Semiconductors
Categories: SRAMs
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The NXP Semiconductors MCM63P837ZP200 is a 9-Megabit Cache SRAM with a 256K x 36 memory organization. Featuring a maximum access time of 3.0 ns, this synchronous SRAM operates at a clock frequency up to 200 MHz. Built on CMOS technology, it offers 3-state outputs and common I/O. The component is housed in a 119-ball PBGA package (R-PBGA-B119) with a 1.27 mm terminal pitch, suitable for surface-mount applications. Operating within a temperature range of 0°C to 70°C, it requires a supply voltage of 3.3V nominal, with a range of 3.135V to 3.465V. This device is commonly employed in high-performance computing, networking infrastructure, and consumer electronics applications.
Additional Information
Series: MCM63P837RoHS Status: Manufacturer Lead Time: Product Status: DiscontinuedPackaging: Datasheet:Download Free CAD Model:
Technical Details:
| Width | 14.0000 |
| Technology | CMOS |
| Length | 22.0000 |
| Access_Time_Max | 3.0000000000000000 |
| Clock_Frequency_Max | 200.00000 |
| I_O_Type | COMMON |
| JESD_30_Code | R-PBGA-B119 |
| Memory_Density | 9437184.0000000000000000 |
| Memory_IC_Type | CACHE SRAM |
| Memory_Organization | 256KX36 |
| Memory_Width | 36 |
| Number_of_Functions | 1 |
| Number_of_Terminals | 119 |
| Number_of_Words | 262144.0000000000000000 |
| Number_of_Words_Code | 256k |
| Operating_Mode | Synchronous |
| Operating_Temperature_Max | 70.0 |
| Operating_Temperature_Min | 0.0 |
| Output_Characteristics | 3-State |
| Package_Body_Material | PLASTIC/EPOXY |
| Package_Code | BGA |
| Package_Equivalence_Code | BGA119,7X17,50 |
| Package_Shape | Rectangular |
| Package_Style | GRID ARRAY |
| Parallel_Serial | Serial |
| Seated_Height_Max | 2.4000 |
| Standby_Voltage_Min | 3.140000 |
| Supply_Voltage_Max | 3.46500 |
| Supply_Voltage_Min | 3.13500 |
| Supply_Voltage_Nom | 3.3 |
| Surface_Mount | Yes |
| Terminal_Form | Ball |
| Terminal_Pitch | 1.270 |
| Terminal_Position | Bottom |
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