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MCM63P837ZP166

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MCM63P837ZP166

Cache SRAM, 256KX36, 3.5ns, CMOS, PBGA119

Manufacturer: NXP Semiconductors

Categories: SRAMs

Quality Control: Learn More

NXP Semiconductors MCM63P837ZP166 is a high-speed Cache SRAM component from the MCM63P837 series. This device features a memory organization of 256K words by 36 bits, providing a total density of 9M bits. It operates synchronously with a maximum clock frequency of 166 MHz and offers a fast access time of 3.5 ns. The MCM63P837ZP166 utilizes CMOS technology and comes in a 119-ball PBGA package with a terminal pitch of 1.27 mm. Its operating temperature range is from 0°C to 70°C, with supply voltages nominal at 3.3V. This component is suitable for applications requiring high-bandwidth data buffering and rapid data retrieval, commonly found in networking equipment, high-performance computing, and advanced consumer electronics.

Additional Information

Series: MCM63P837RoHS Status: Manufacturer Lead Time: Product Status: DiscontinuedPackaging: Datasheet:
Technical Details:
Length22.0000
Width14.0000
TechnologyCMOS
Access_Time_Max3.5000000000000000
Clock_Frequency_Max166.00000
I_O_TypeCOMMON
JESD_30_CodeR-PBGA-B119
Memory_Density9437184.0000000000000000
Memory_IC_TypeCACHE SRAM
Memory_Organization256KX36
Memory_Width36
Number_of_Functions1
Number_of_Terminals119
Number_of_Words262144.0000000000000000
Number_of_Words_Code256k
Operating_ModeSynchronous
Operating_Temperature_Max70.0
Operating_Temperature_Min0.0
Output_Characteristics3-State
Package_Body_MaterialPLASTIC/EPOXY
Package_CodeBGA
Package_Equivalence_CodeBGA119,7X17,50
Package_ShapeRectangular
Package_StyleGRID ARRAY
Parallel_SerialSerial
Seated_Height_Max2.4000
Standby_Voltage_Min3.140000
Supply_Voltage_Max3.46500
Supply_Voltage_Min3.13500
Supply_Voltage_Nom3.3
Surface_MountYes
Terminal_FormBall
Terminal_Pitch1.270
Terminal_PositionBottom

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