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MCM63P837TQ225

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MCM63P837TQ225

Cache SRAM, 256KX36, 2.6ns, CMOS, PQFP100

Manufacturer: NXP Semiconductors

Categories: SRAMs

Quality Control: Learn More

NXP Semiconductors MCM63P837TQ225 is a 9 Mbit Cache SRAM with a 256K x 36 memory organization. This synchronous device offers a maximum access time of 2.6 ns and supports clock frequencies up to 225 MHz. Configured in a 100-pin LQFP package with a 0.65 mm terminal pitch, it operates from a nominal 3.3V supply voltage (3.135V to 3.465V). The MCM63P837TQ225 features common I/O and 3-state outputs, suitable for high-performance applications in networking, computing, and telecommunications infrastructure. Its CMOS technology ensures efficient operation within the 0°C to 70°C temperature range.

Additional Information

Series: MCM63P837RoHS Status: Manufacturer Lead Time: Product Status: DiscontinuedPackaging: Datasheet:
Technical Details:
Width14.0000
TechnologyCMOS
Length20.0000
Access_Time_Max2.6000000000000000
Clock_Frequency_Max225.00000
I_O_TypeCOMMON
JESD_30_CodeR-PQFP-G100
Memory_Density9437184.0000000000000000
Memory_IC_TypeCACHE SRAM
Memory_Organization256KX36
Memory_Width36
Number_of_Functions1
Number_of_Terminals100
Number_of_Words262144.0000000000000000
Number_of_Words_Code256k
Operating_ModeSynchronous
Operating_Temperature_Max70.0
Operating_Temperature_Min0.0
Output_Characteristics3-State
Package_Body_MaterialPLASTIC/EPOXY
Package_CodeLQFP
Package_Equivalence_CodeQFP100,.63X.87
Package_ShapeRectangular
Package_StyleFLATPACK, LOW PROFILE
Parallel_SerialSerial
Seated_Height_Max1.6000
Standby_Voltage_Min3.140000
Supply_Voltage_Max3.46500
Supply_Voltage_Min3.13500
Supply_Voltage_Nom3.3
Surface_MountYes
Terminal_FormGull Wing
Terminal_Pitch0.650
Terminal_PositionQUAD

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