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MCM63P837TQ200

Cache SRAM, 256KX36, 3ns, CMOS, PQFP100

Manufacturer: NXP Semiconductors

Categories: SRAMs

Quality Control: Learn More

NXP Semiconductors MCM63P837TQ200 is a synchronous Cache SRAM with a memory organization of 256K x 36. This CMOS component features a maximum access time of 3.0 ns and supports a clock frequency up to 200 MHz. The MCM63P837 series device is housed in a 100-terminal, rectangular, low-profile plastic PQFP package (R-PQFP-G100) with a 0.65 mm terminal pitch. It operates within a temperature range of 0°C to 70°C and requires a supply voltage of 3.3V nominal. This component finds application in high-performance computing, networking infrastructure, and embedded systems requiring fast data buffering. The I/O type is COMMON with 3-state output characteristics.

Additional Information

Series: MCM63P837RoHS Status: Manufacturer Lead Time: Product Status: DiscontinuedPackaging: Datasheet:
Technical Details:
Length20.0000
Width14.0000
TechnologyCMOS
Access_Time_Max3.0000000000000000
Clock_Frequency_Max200.00000
I_O_TypeCOMMON
JESD_30_CodeR-PQFP-G100
Memory_Density9437184.0000000000000000
Memory_IC_TypeCACHE SRAM
Memory_Organization256KX36
Memory_Width36
Number_of_Functions1
Number_of_Terminals100
Number_of_Words262144.0000000000000000
Number_of_Words_Code256k
Operating_ModeSynchronous
Operating_Temperature_Max70.0
Operating_Temperature_Min0.0
Output_Characteristics3-State
Package_Body_MaterialPLASTIC/EPOXY
Package_CodeLQFP
Package_Equivalence_CodeQFP100,.63X.87
Package_ShapeRectangular
Package_StyleFLATPACK, LOW PROFILE
Parallel_SerialSerial
Seated_Height_Max1.6000
Standby_Voltage_Min3.140000
Supply_Voltage_Max3.46500
Supply_Voltage_Min3.13500
Supply_Voltage_Nom3.3
Surface_MountYes
Terminal_FormGull Wing
Terminal_Pitch0.650
Terminal_PositionQUAD

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